SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SA907
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA908
2SA909
V
CEsat
Collector-emitter saturation voltage
2SA907
I
CBO
Collector cut-off current
2SA908
2SA909
I
EBO
h
FE
f
T
Emitter cut-off current
DC current gain
Transition frequency
I
C
=-10A; I
B
=-1A
V
CB
=-100V; I
E
=0
V
CB
=-150V; I
E
=0
V
CB
=-200V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-5A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-12V
I
C
=-50mA ;I
B
=0
CONDITIONS
2SA907/908/909
SYMBOL
MIN
-100
-150
-200
TYP.
MAX
UNIT
V
-3.0
V
-1.0
mA
-1.0
30
10
mA
MHz
2