SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-1mA;I
B
=0
I
C
=-10µA ;I
E
=0
I
E
=-10µA ;I
C
=0
I
C
=-1A ;I
B
=-50mA
I
C
=-500mA ;I
B
=-50mA
V
CB
=-10V; I
E
=0
V
CE
=-18V; I
B
=0
I
C
=-500mA ; V
CE
=-2V
I
C
=-1.5A ; V
CE
=-2V
I
E
=0 ; V
CB
=-6V;f=1MHz
I
E
=50mA ; V
CB
=-6V
90
50
40
200
MIN
-18
-20
-5
2SA900
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
CEO
h
FE-1
h
FE-2
C
OB
f
T
TYP.
MAX
UNIT
V
V
V
-0.5
-1.2
-1
-10
470
V
V
µA
µA
pF
MHz
h
FE-1
Classifications
Q
90-155
R
130-210
S
180-280
T
250-360
U
330-470
2
SAVANTIC [ Savantic, Inc. ]
