SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA837
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
ICBO
PARAMETER
CONDITIONS
MIN
-90
-90
-5
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-25mA; IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
IC=-1mA; IE=0
V
IE=-1mA ; IC=0
V
IC=-3A; IB=-0.3A
VCB=-90V; IE=0
VEB=-5V; IC=0
-1.5
-0.1
-0.1
200
V
mA
mA
IEBO
Emitter cut-off current
hFE
DC current gain
IC=-1A ; VCE=-4V
IE=0; VCB=-10V;f=1MHz
IC=-1A ; VCE=-10V
40
COB
Collector output capacitance
Transition frequency
200
10
pF
fT
MHz
2
SAVANTIC [ Savantic, Inc. ]
