SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA769
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
-80
-80
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-25mA ,IB=0
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=-1mA ,IE=0
V
IC=-3A; IB=-0.3A
IC=-3A; IB=-0.3A
VCB=-80V; IE=0
VEB=-5V; IC=0
-1.0
-1.5
-10
V
V
µA
µA
IEBO
Emitter cut-off current
-10
hFE
DC current gain
IC=-1A ; VCE=-4V
IC=-0.5A ; VCE=-10V
60
240
fT
Transition frequency
10
MHz
2