SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA757
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
-100
-120
-5
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-50mA ;RBE=∞
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
DC current gain
IC=-5mA ,IE=0
V
IE=-5mA ,IC=0
V
IC=-5A; IB=-1A
IC=-1A ; VCE=-5V
VCB=-30V; IE=0
IC=-1A ; VCE=-5V
IC=-5A ; VCE=-5V
IC=-1A ; VCE=-5V
-1.8
-1.5
-1
V
V
ICBO
mA
hFE-1
25
20
200
hFE-2
DC current gain
fT
Transition frequency
24
MHz
ꢀ hFE-1 Classifications
A
B
C
25-60
50-120
100-200
2