SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-10mA ,I
B
=0
I
C
=-500mA; I
B
=-50mA
I
C
=-500mA ; V
CE
=-10V
V
CB
=-100V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-500mA ; V
CE
=-10V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-500mA ; V
CE
=-10V
40
90
8
MIN
-150
2SA740
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
C
OB
f
T
TYP.
MAX
UNIT
V
-1.5
-1.0
-20
-10
140
V
V
µA
µA
pF
MHz
2
SAVANTIC [ Savantic, Inc. ]
