SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA744/745/745A
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
PARAMETER
CONDITIONS
MIN
-80
TYP.
MAX
UNIT
2SA744
2SA745
2SA745A
Collector-emitter
breakdown voltage
IC=-50mA ;IB=0
V
-100
-120
Collector-emitter saturation voltage IC=-3A; IB=-0.3A
-1.5
-1.0
-1.0
V
2SA744
2SA745
2SA745A
VCB=-80V; IE=0
VCB=-100V; IE=0
VCB=-120V; IE=0
VEB=-6V; IC=0
Collector
ICBO
mA
mA
MHz
cut-off current
IEBO
hFE
fT
Emitter cut-off current
DC current gain
IC=-3A ; VCE=-4V
IC=-0.5A ; VCE=-12V
30
Transition frequency
15
Switching times
tr
ts
tf
Rise time
1.2
2.0
µs
µs
µs
IC=-3A;RL=4Ω
IB1=-0.2A; IB2=0.1A
VCC=-12V
Storage time
Fall time
0.55
2