SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA679 2SA680
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-120
-100
-5
TYP.
MAX
UNIT
2SA679
2SA680
Collector-emitter
breakdown voltage
V(BR)CEO
IC=-0.1A ;IB=0
V
V(BR)EBO
VCEsat
VBE
Emitter-base breakdown voltage
IE=-10mA ;IC=0
V
V
Collector-emitter saturation voltage IC=-10A; IB=-1A
-3.0
-2.5
-0.1
-0.1
140
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-10A ; VCE=-5V
VCB=-50V; IE=0
V
ICBO
mA
mA
IEBO
VEB=-5V; IC=0
hFE-1
hFE-2
COB
IC=-2A ; VCE=-5V
IC=-7A ; VCE=-5V
IE=0 ; VCB=-10V; f=1.0MHz
IC=-2A ; VCE=-5V
40
15
DC current gain
Output capacitance
Transition frequency
900
6
pF
fT
MHz
ꢀ hFE-1 Classifications
R
Y
40-80
70-140
2