SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA489
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
-60
-70
-5
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-30mA ,IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=-1mA; IE=0
V
IE=-1mA; IC=0
V
IC=-3A; IB=-0.3A
IC=-3A; IB=-0.3A
VCB=-70V; IE=0
VEB=-5V; IC=0
-1.0
-1.5
-10
V
V
µA
µA
IEBO
Emitter cut-off current
-10
hFE
DC current gain
IC=-0.5A ; VCE=-5V
IC=-0.5A ; VCE=-5V
40
3
240
fT
Transition frequency
MHz
ꢀ hFE Classifications
R
O
Y
40-80
70-140
120-240
2