SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-30mA ,I
B
=0
I
C
=-1mA; I
E
=0
I
E
=-1mA; I
C
=0
I
C
=-3A; I
B
=-0.3A
I
C
=-3A; I
B
=-0.3A
V
CB
=-70V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.5A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V
40
3
MIN
-60
-70
-5
2SA489
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
V
V
-1.0
-1.5
-10
-10
240
V
V
µA
µA
MHz
h
FE
Classifications
R
40-80
O
70-140
Y
120-240
2