SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SA1943
SYMBOL
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-50mA ;I
B
=0
-230
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-8A I
B
=-0.8A
-3.0
V
V
BE
Base-emitter voltage
I
C
=-7A ; V
CE
=-5V
-1.5
V
I
CBO
Collector cut-off current
V
CB
=-230V; I
E
=0
-5
µA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-5
µA
h
FE-1
DC current gain
I
C
=-1A ; V
CE
=-5V
55
160
h
FE-2
DC current gain
I
C
=-7A ; V
CE
=-5V
35
f
T
Transition frequency
I
C
=-1A ; V
CE
=-5V
30
MHz
C
OB
Collector output capacitance
f=1MHz;V
CB
=-10V
360
pF
h
FE-1
classifications
R
55-110
O
80-160
2
SAVANTIC [ Savantic, Inc. ]
