SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1859 2SA1859A
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
PARAMETER
CONDITIONS
MIN
-150
-180
TYP.
MAX
UNIT
2SA1859
Collector-emitter
breakdown voltage
IC=-10mA ; IB=0
V
2SA1859A
Collector-emitter saturation voltage
IC=-0.7A;IB=-70mA
VCB=-150V;IE=0
-1.0
-10
-10
-10
240
V
2SA1859
µA
µA
µA
Collector cut-off
ICBO
current
2SA1859A
VCB=-180V;IE=0
IEBO
hFE
fT
Emitter cut-off current
DC current gain
VEB=-6V; IC=0
IC=-0.7A ; VCE=-10V
IC=-0.7A ; VCE=-12V
IE=0 ; VCB=-10V;f=1MHz
60
Transition frequency
Output capacitance
60
30
MHz
pF
COB
Switching time
ton Turn-on time
ts
0.50
1.00
0.50
µs
µs
µs
IC=-1A ;IB1=-IB2=-0.1A
VCC=-20V ,RL=20Ω
Storage time
Fall time
tf
2