SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-10mA ; I
B
=0
I
C
=-0.5A ;I
B
=-50mA
I
C
=-0.5A ; V
CE
=-5V
V
CB
=-230V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.1A ; V
CE
=-5V
I
E
=0; V
CB
=-10V;f=1MHz
I
C
=-0.1A ; V
CE
=-10V
100
MIN
-230
2SA1837
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
C
OB
f
T
TYP.
MAX
UNIT
V
-1.5
-1.0
-1.0
-1.0
320
30
70
V
V
µA
µA
pF
MHz
2