SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1757
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN
-60
-5
TYP.
MAX
UNIT
V
V(BR)CEO
V(BR)EBO
VCEsat-1
VCEsat-2
VBEsat-1
VBEsat-2
ICBO
Collector-emitter breakdown voltage IC=-1mA , IB=0
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IE=-50µA , IC=0
V
IC=-3A, IB=-0.15A
IC=-4A, IB=-0.2A
IC=-3A, IB=-0.15A
IC=-4A, IB=-0.2A
VCB=-100V, IE=0
VEB=-5V; IC=0
-0.3
-0.5
-1.2
-1.5
-10
V
V
V
V
µA
µA
IEBO
Emitter cut-off current
-10
hFE
DC current gain
IC=-1A ; VCE=-2V
IE=0 ; VCB=-10V,f=1MHz
IC=-0.5A ; VCE=-10V
160
320
Cob
Output capacitance
130
80
pF
fT
Transition frequency
MHz
Switching times
ton
Turn-on time
0.3
1.5
0.3
µs
µs
µs
IC=-3A ; RL=10Ω
IB1=- IB2=-0.15A
VCC≈-30V
ts
Storage time
Fall time
tf
2
SAVANTIC [ Savantic, Inc. ]
