SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-50mA; I
B
=0
I
C
=-5 A;I
B
=-0.5 A
V
CB
=-140V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-3A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-12V
50
MIN
-140
2SA1672
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
-2.0
-10
-10
180
20
V
µA
µA
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-5A;R
L
=12A
I
B1
=-I
B2
=-0.5A
V
CC
=-60V
0.30
0.90
0.20
µs
µs
µs
h
FE
classifications
O
50-100
P
70-140
Y
90-180
2
SAVANTIC [ Savantic, Inc. ]
