SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SA1658
SYMBOL
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA ; I
B
=0
-30
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-2A ;I
B
=-0.2A
-0.3
-0.8
V
V
BE
Base-emitter on voltage
I
C
=-0.5A ; V
CE
=-2V
-0.75
-1.0
V
I
CBO
Collector cut-off current
V
CB
=-20V; I
E
=0
-1.0
µA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-1.0
µA
h
FE-1
DC current gain
I
C
=-0.5A ; V
CE
=-2V
70
240
h
FE-2
DC current gain
I
C
=-2.5A ; V
CE
=-2V
25
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
40
pF
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-2V
100
MHz
h
FE-1
Classifications
O
70-140
Y
120-240
2
SAVANTIC [ Savantic, Inc. ]
