SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Collector capacitance
CONDITIONS
I
C
=-4A; I
B
=-0.2A
I
C
=-6A; I
B
=-0.3A
I
C
=-4A; I
B
=-0.2A
I
C
=-6A; I
B
=-0.3A
V
CB
=-100V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.5A ; V
CE
=-2V
I
C
=-1.5A ; V
CE
=-2V
I
C
=-4A ; V
CE
=-2V
I
C
=-1.5A ; V
CE
=-10V
I
E
=-0 ; V
CB
=-10V;f=1MHz
100
100
60
MIN
SYMBOL
V
CEsat-1
V
CEsat -2
V
BE sat -1
V
BE sat -2
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
OB
2SA1651
TYP.
MAX
-0.3
-0.5
-1.2
-1.5
-10
-10
UNIT
V
V
V
V
µA
µA
400
150
150
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-4A; I
B1
=-I
B2
=-0.2A
R
L
=12.5@; V
CC
=-50V
0.3
1.5
0.4
µs
µs
µs
h
FE-2
Classifications
M
100-200
L
150-300
K
200-400
2
SAVANTIC [ Savantic, Inc. ]
