SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SA1640
SYMBOL
TYP.
MAX
UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
Collector-emitter breakdown voltage
I
C
=-10mA ; I
B
=0
I
C
=-1mA ; I
E
=0
I
E
=-1mA ; I
C
=0
I
C
=-3A ;I
B
=-0.1A
I
C
=-3A ;I
B
=-0.1A
V
CB
=-30V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.2A ; V
CE
=-2V
I
C
=-0.5A ; V
CE
=-10V
-30
V
Collector-base breakdown voltage
-30
V
Emitter-base breakdown voltage
-5
V
Collector-emitter saturation voltage
-0.4
V
Base-emitter saturation voltage
-1.0
V
Collector cut-off current
-10
µA
Emitter cut-off current
-10
µA
DC current gain
100
300
Transition frequency
20
MHz
2
SAVANTIC [ Savantic, Inc. ]
