SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1601
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter sustaining voltage IC=-0.1A ;IB=0
Collector-emitter saturation voltage IC=-7.5A; IB=-0.4A
-40
V
V
V
-0.3
-1.2
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-7.5A; IB=-0.4A
At rated volatge
-0.1
-0.1
mA
mA
ICEO
IEBO
At rated volatge
hFE
IC=-7.5A ; VCE=-2V
IC=-1.5A ; VCE=-10V
70
fT
Transition frequency
50
MHz
Switching times
ton
Turn-on time
0.3
1.5
0.5
µs
µs
µs
IC=-7.5A;IB1=-IB2=-0.75A ,
RL=4Ω;VBB2=-4V
ts
Storage time
Fall time
tf
2