SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-25mA; I
B
=0
I
E
=-1mA; I
C
=0
I
C
=-12 A;I
B
=-0.6 A
I
C
=-12 A;I
B
=-0.6 A
V
CB
=-60V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-3A ; V
CE
=-2V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-1.5A ; V
CE
=-10V
100
MIN
-60
-6
2SA1513
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
TYP.
MAX
UNIT
V
V
-0.5
-1.5
-10
-10
400
300
80
V
V
µA
µA
pF
MHz
2
SAVANTIC [ Savantic, Inc. ]
