SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-50mA; I
B
=0
I
C
=-10 A;I
B
=-1 A
V
CB
=-200V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-8A ; V
CE
=-4V
I
C
=-1A ; V
CE
=-12V
I
E
=0; V
CB
=-10V;f=1MHz
50
MIN
-200
2SA1494
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
TYP.
MAX
UNIT
V
-2.5
-100
-100
180
20
500
V
µA
µA
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-10A;R
L
=4A
I
B1
=-I
B2
=-1A
V
CC
=-40V
0.60
0.90
0.20
µs
µs
µs
h
FE
classifications
Y
50-100
P
70-140
G
90-180
2