SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1355
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
-70
-70
-5
TYP.
MAX
UNIT
V
Collector-base breakdown voltage
IC=-1mA ,IE=0
Collector-emitter breakdown voltage IC=-1mA ,IB=0
V
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IE=-1mA ,IC=0
V
IC=-2A; IB=-0.2A
IC=-2A; IB=-0.2A
VCB=-40V; IE=0
VEB=-4V; IC=0
-0.5
-1.2
-100
-100
280
V
V
µA
µA
IEBO
hFE
DC current gain
IC=-1A ; VCE=-2V
IC=-1A ; VCE=-5V
70
fT
Transition frequency
40
MHz
2
SAVANTIC [ Savantic, Inc. ]
