SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-50mA ,I
B
=0
I
C
=-6A; I
B
=-0.3A
I
C
=-6A; I
B
=-0.3A
V
CB
=-80V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-1A ; V
CE
=-1V
I
C
=-6A ; V
CE
=-1V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-1A ; V
CE
=-5V
70
40
MIN
-80
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
ob
f
T
2SA1329
TYP.
MAX
UNIT
V
-0.2
-0.9
-0.4
-1.2
-10
-10
240
V
V
µA
µA
400
50
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
B1
=- I
B2
=-0.3A
R
L
=5B;V
CC
=-30V
0.3
1.0
0.5
µs
µs
µs
h
FE-1
Classifications
O
70-140
Y
120-240
2