SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1387
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Trainsition frequency
Collector output capacitance
CONDITIONS
I
C
=-10mA ;I
B
=0
I
C
=-3A ;I
B
=-0.075A
I
C
=-3A ; I
B
=-0.075A
V
CB
=-50V; I
E
=0
V
EB
=-7V; I
C
=0
I
C
=-1A ; V
CE
=-1V
I
C
=-3A ; V
CE
=-1V
I
C
=-1A ; V
CE
=-4V
I
E
=0; V
CE
=-10V;f=1MHz
150
70
80
200
MHz
pF
MIN
-50
-0.15
-0.8
-0.4
-1.2
-1
-1
400
TYP.
MAX
UNIT
V
V
V
µA
µA
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
ob
Switching times
T
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
B1
=-I
B2
=-0.075A
V
CC
@-30V;R
L
=10A
0.2
1.0
0.2
µs
µs
µs
2