SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1295
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-25mA ; IB=0
-230
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-5A ;IB=-0.5A
VCB=-230V; IE=0
VEB=-5V; IC=0
-2.0
-100
-100
140
V
µA
µA
IEBO
hFE
IC=-5A ; VCE=-4V
IE=0 ; VCB=-10V;f=1MHz
IC=-2A ; VCE=-12V
50
Cob
Output capacitance
500
35
pF
fT
Transition frequency
MHz
Switching times
ton Turn-on time
ts
0.35
1.50
0.30
µs
µs
µs
IC=-5A;RL=12Ω
IB1=-IB2=-0.5A
Storage time
Fall time
VCC=-60V
tf
ꢀ hFE classifications
O
Y
50-100
70-140
2