SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-10mA ; I
B
=0
I
C
=-3A;I
B
=-0.15A
I
C
=-3A;I
B
=-0.15A
V
CB
=-60V;I
E
=0
V
EB
=-7V; I
C
=0
I
C
=-1A ; V
CE
=-1V
I
C
=-3A ; V
CE
=-1V
I
C
=-1A ; V
CE
=-4V
I
E
=0 ; V
CB
=-10V;f=1MHz
70
30
MIN
-60
2SA1279
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
TYP.
MAX
UNIT
V
-0.4
-1.2
-1
-1
240
V
V
µA
µA
60
200
MHz
pF
2
SAVANTIC [ Savantic, Inc. ]
