SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-10mA ,I
B
=0
I
E
=-1mA ,I
C
=0
I
C
=-2A; I
B
=-0.2A
I
C
=-0.5A ; V
CE
=-2V
V
CB
=-20V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.5A ; V
CE
=-2V
I
C
=-2.5A ; V
CE
=-2V
I
C
=-0.5A ; V
CE
=-2V
I
E
=0 ; V
CB
=10V;f=1MHz
70
25
MIN
-30
-5
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
ob
2SA1276
TYP.
MAX
UNIT
V
V
-0.3
-0.75
-0.8
-1.0
-1.0
-1.0
240
V
V
µA
µA
100
40
MHz
pF
h
FE-1
Classifications
O
70-140
Y
120-240
2
SAVANTIC [ Savantic, Inc. ]
