SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1216
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-25mA ; IB=0
-180
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-8A ;IB=-0.8A
VCB=-180V; IE=0
VEB=-5V; IC=0
-2.0
-100
-100
V
µA
µA
IEBO
hFE
IC=-8A ; VCE=-4V
IE=0 ; VCB=-10V;f=1MHz
IC=-2A ; VCE=-12V
30
Cob
Output capacitance
500
40
pF
fT
Transition frequency
MHz
Switching times
ton
Turn-on time
0.30
0.70
0.20
µs
µs
µs
IC=-10A;RL=Ω
IB1=-IB2=-1A
VCC=-40V
ts
Storage time
Fall time
tf
ꢀ hFE classifications
O
Y
P
G
30-60
50-100
70-140 90-180
2
SAVANTIC [ Savantic, Inc. ]
