SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-50mA ; I
B
=0
I
E
=-1mA ; I
C
=0
I
C
=-10A ;I
B
=-1A
V
CB
=-200V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-8A ; V
CE
=-4V
I
C
=-1A ; V
CE
=-12V
20
MIN
-200
-6
2SA1170
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
V
-2.5
-100
-100
V
µA
µA
20
MHz
Switching times
t
r
t
stg
t
f
Rise time
Storage time
Fall time
I
C
=-10A; I
B1
=- I
B2
=-1A
R
L
=4A;V
CC
=-40V
0.6
0.9
0.2
µs
µs
µs
2
SAVANTIC [ Savantic, Inc. ]
