SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-25mA ; I
B
=0
I
E
=-1mA ; I
C
=0
I
C
=-5A ;I
B
=-0.5A
I
C
=-5A ; V
CE
=-5V
V
CB
=-130V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-2A ; V
CE
=-5V
I
C
=-5A ; V
CE
=-5V
I
C
=-1A ; V
CE
=-10V
55
35
60
MIN
-130
-5
2SA1108
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
TYP.
MAX
UNIT
V
V
-2.0
-2.0
-5
-5
160
V
V
µA
µA
MHz
2
SAVANTIC [ Savantic, Inc. ]
