SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1104
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-25mA ;IB=0
-120
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=-3A; IB=-0.3A
IC=-3A; IB=-0.3A
VCB=-120V; IE=0
VEB=-6V; IC=0
-1.5
-1.8
-100
-100
180
V
V
µA
µA
IEBO
hFE
DC current gain
IC=-3A ; VCE=4V
IE=1A ; VCE=-12V
50
fT
Transition frequency
20
MHz
2
SAVANTIC [ Savantic, Inc. ]
