SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SA1096
I
C
=-2mA ; I
B
=0
2SA1096A
I
C
=-1mA ;I
E
=0
I
C
=-1.5A ;I
B
=-0.15A
I
C
=-1.5A ;I
B
=-0.15A
V
CE
=-10V; I
B
=0
V
CB
=-20V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
E
=0 ; V
CB
=-20V,f=1MHz
CONDITIONS
2SA1096 2SA1096A
SYMBOL
MIN
-50
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-60
-70
-1.0
-1.5
-1
-100
-10
80
55
150
220
pF
MHz
V
V
V
µA
µA
µA
V
(BR)CBO
V
CEsat
V
BEsat
I
CEO
I
CBO
I
EBO
h
FE
C
OB
f
T
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
I
E
=-0.5A ; V
CB
=-5V,f=200MHz
h
FE
Classifications
Q
80-160
R
120-220
2
SAVANTIC [ Savantic, Inc. ]
