SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-1mA ,R
BE
=8
I
C
=-1µA ,I
E
=0
I
E
=-1µA ,I
C
=0
I
C
=-0.7A; I
B
=-70mA
I
C
=-0.7A ; V
CE
=-5V
V
CB
=-160V; I
E
=0
V
CE
=-160V; I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-0.3A ; V
CE
=-5V
I
C
=-0.7A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-10V;f=10MHz
I
E
=0 ; V
CB
=-20V;f=1MHz
100
50
MIN
-160
-160
-5
2SA1079
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
TYP.
MAX
UNIT
V
V
V
-0.45
-0.8
-1.0
-1.7
-1
-100
-1
350
V
V
µA
µA
µA
120
100
MHz
pF
2
SAVANTIC [ Savantic, Inc. ]
