SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N6933
I
C
=0.2A ;L=25mH
2N6934
I
E
=50mA ;I
C
=0
I
C
=15A ;I
B
=3A
T
C
=100
I
C
=15A ;I
B
=3A
T
C
=100
V
CE
=450V; V
BE
=-1.5V
T
C
=100
V
CE
=550V; V
BE
=-1.5V
T
C
=100
V
EB
=8V; I
C
=0
I
C
=15A ; V
CE
=3V
f=1MHz;V
CB
=10V
CONDITIONS
SYMBOL
2N6933 2N6934
MIN
300
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
350
8
1.0
2.0
1.5
1.5
0.1
1.0
0.1
1.0
2.0
8
150
35
400
pF
V
V
V
V
(BR)EBO
V
CEsat
V
BEsat
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
2N6933
I
CEV
Collector cut-off current
2N6934
mA
I
EBO
h
FE
C
OB
Emitter cut-off current
DC current gain
Collector output capacitance
mA
Switching times resistive load
t
d
t
r
t
stg
t
f
Delay time
Rise time
Storage time
Fall time
I
C
=15A; I
B1
=-I
B2
=3A
V
CC
=300V, R
C
=30C
V
BB
=-5V;t
p
=30µs
0.1
0.7
2.5
0.5
µs
µs
µs
µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.71
UNIT
/W
2
SAVANTIC [ Savantic, Inc. ]
