SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
2N6688
SYMBOL
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.2A ;I
B
=0
200
V
V
CEsat
Collector-emitter saturation voltage
I
C
=20A; I
B
=2A
1.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=20A; I
B
=2A
1.8
V
I
CEV
Collector cut-off current
V
CE
=300V; V
BE
=-1.5V
50
µA
I
EBO
Emitter cut-off current
V
EB
=8V; I
C
=0
100
µA
h
FE-1
DC current gain
I
C
=1A ; V
CE
=2V
25
h
FE-2
DC current gain
I
C
=10A ; V
CE
=2V
20
80
h
FE-3
DC current gain
I
C
=20A ; V
CE
=2V
15
f
T
Transition frequency
I
C
=1A ; V
CE
=10V
20
100
MHz
2
SAVANTIC [ Savantic, Inc. ]
