SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N6676
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6677
2N6678
V
CEsat
V
BEsat
I
CEV
I
EBO
h
FE-1
h
FE -2
C
OB
f
T
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
I
C
=15A; I
B
=3A
I
C
=15A; I
B
=3A
I
C
=0.2A ; I
B
=0
SYMBOL
2N6676 2N6677 2N6678
CONDITIONS
MIN
300
350
400
TYP.
MAX
UNIT
V
1.5
1.5
0.1
1.0
2.0
15
8
500
3
50
V
V
mA
mA
V
CE
=RatedV
CEV
;V
BE(off)
=-1.5V
T
C
=100
V
EB
=8V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=15A ; V
CE
=3V
I
E
=0 ;V
CB
=10V;f=0.1MHz
I
C
=1A ; V
CE
=10V;f=5.0MHz
pF
MHz
Switching times
t
d
t
r
t
s
t
f
Delay time
Rise time
Storage time
Fall time
I
C
=15A; I
B1
=-I
B2
=3.0A
V
CC
=200V; t
p
=20µs;
Duty CycleB2.0%
V
BB
=6V,R
L
=1.35E
0.2
0.6
2.5
0.6
µs
µs
µs
µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.0
UNIT
/W
2
SAVANTIC [ Savantic, Inc. ]
