SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6674 2N6675
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N6674
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6675
V
CEsat-1
V
CEsat-2
V
BEsat
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
2N6674
I
CBO
Collector cut-off current
2N6675
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
V
CB
=650V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=1A ; V
CE
=3V
I
C
=10A ; V
CE
=2V
I
C
=0.5A ; V
CE
=10V;f=1MHz
15
8
15
1.0
40
20
MHz
mA
I
C
=10A; I
B
=2A
I
C
=15A; I
B
=5A
I
C
=10A; I
B
=2A
V
CB
=450V; I
E
=0
0.1
mA
I
C
=0.2A ;I
B
=0
400
1.0
5.0
1.5
V
V
V
CONDITIONS
MIN
300
V
TYP.
MAX
UNIT
SYMBOL
2
SAVANTIC [ Savantic, Inc. ]
