SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N6671
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6672
2N6673
V
CEsat-1
V
CEsat-2
V
BEsat
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
2N6671
I
CEV
Collector cut-off current
2N6672
2N6673
I
EBO
h
FE
C
OB
f
T
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
I
C
=5A; I
B
=1A
I
C
=8A ;I
B
=4A
I
C
=5A; I
B
=1A
I
C
=0.2A ;I
B
=0
SYMBOL
2N6671 2N6672 2N6673
CONDITIONS
MIN
300
350
400
TYP.
MAX
UNIT
V
1.0
2.0
1.6
V
V
V
V
CE
=450V; V
BE(off)
=-1.5V
V
CE
=550V; V
BE(off)
=-1.5V
V
CE
=650V; V
BE(off)
=-1.5V
V
EB
=8V; I
C
=0
I
C
=5A ; V
CE
=3V
I
E
=0 ; V
CB
=10V;f=0.1MHz
I
C
=0.2A ; V
CE
=10V
15
10
2.0
40
300
60
pF
MHz
mA
0.1
mA
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
/W
2
SAVANTIC [ Savantic, Inc. ]
