SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6576 2N6577 2N6578
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N6576
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6577
2N6578
V
CEsat-1
V
CEsat-2
V
BE sat-1
V
BE sat-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
2N6576
I
CEO
Collector cut-off current
2N6577
2N6578
2N6576
I
CBO
Collector cut-off current
2N6577
2N6578
I
EBO
h
FE-1
h
FE-2
h
FE-3
h
FE-4
V
F
Emitter cut-off current
DC current gain
DC current gain
DC current gain
DC current gain
Diode forward voltage
I
C
=10A; I
B
=100mA
I
C
=15A ;I
B
=150mA
I
C
=10A; I
B
=100mA
I
C
=15A ;I
B
=150mA
V
CE
=60V; I
B
=0
V
CE
=90V; I
B
=0
V
CE
=120V; I
B
=0
V
CB
=60V; I
E
=0
V
CB
=90V; I
E
=0
V
CB
=120V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=0.4A ; V
CE
=3V
I
C
=4A ; V
CE
=3V
I
C
=10A ; V
CE
=3V
I
C
=15A ; V
CE
=4V
I
F
=15A
200
2000
500
100
4.5
A
20000
5000
7.5
mA
0.5
mA
1.0
mA
I
C
=0.2A ;I
B
=0
CONDITIONS
MIN
60
90
120
2.8
4.0
3.5
4.5
V
V
V
V
V
TYP.
MAX
UNIT
SYMBOL
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.46
UNIT
/W
2
SAVANTIC [ Savantic, Inc. ]
