SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
2N6530
SYMBOL
MAX
UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BE-1
V
BE-2
I
CEV
I
CEO
I
EBO
h
FE-1
h
FE-2
V
F
Collector-emitter sustaining voltage
I
C
=0.2A ; I
B
=0
I
C
=5A ;I
B
=10mA
I
C
=8A; I
B
=80mA
I
C
=5A ; V
CE
=3V
I
C
=8A ; V
CE
=3V
V
CE
=80V; V
BE
=-1.5V
T
C
=125
V
CE
=80V; I
B
=0
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=3V
I
C
=8A ; V
CE
=3V
I
F
=8A
80
V
Collector-emitter saturation voltage
2.0
V
Collector-emitter saturation voltage
3.0
V
Base -emitter on voltage
2.8
V
Base -emitter on voltage
4.5
0.5
5.0
1.0
V
Collector cut-off current
mA
Collector cut-off current
mA
Emitter cut-off current
5.0
mA
DC current gain
1000
10000
DC current gain
100
5000
Diode forward voltage
5.0
V
2
SAVANTIC [ Savantic, Inc. ]
