SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
2N6510
SYMBOL
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1A ;I
B
=0
200
V
V
CEsat-1
Collector-emitter saturation voltage
I
C
=3A; I
B
=0.4A
1.0
V
V
CEsat-2
Collector-emitter saturation voltage
I
C
=5A; I
B
=1A
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=5A; I
B
=1A
V
CE
=250V; V
BE(off)
=-1.5V
T
C
=100
V
EB
=7V; I
C
=0
1.5
0.1
1.5
0.1
V
I
CES
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
h
FE
DC current gain
I
C
=4A ; V
CE
=3V
10
50
f
T
Transition frequency
I
C
=0.5A ; V
CE
=10V
3
MHz
2
SAVANTIC [ Savantic, Inc. ]
