SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tm=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
2N6493
SYMBOL
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1 A ;I
B
=0
70
V
V
CEsat
Collector-emitter saturation voltage
I
C
=10A ;I
B
=100mA
3
V
V
BEsat
Base-emitter saturation voltage
I
C
=10A ;I
B
=100mA
4
V
V
BE
Base-emitter on voltage
I
C
=4A ; V
CE
=4V
2.8
V
I
CEO
Collector cut-off current
V
CE
=50V; I
B
=0
1.0
mA
I
CEX
Collector cut-off current
V
CE
=100V; V
BE(off)
=-1.5V
0.5
mA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
3.0
mA
h
FE-1
DC current gain
I
C
=4A ; V
CE
=4V
500
h
FE-2
DC current gain
I
C
=15A ; V
CE
=4V
100
2
SAVANTIC [ Savantic, Inc. ]
