SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N6477
I
C
=0.1A ;I
B
=0
2N6478
V
CEsat-1
V
CEsat-2
V
BE-1
V
BE-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Base-emitter on voltage
2N6477
2N6478
2N6477
I
CEO
Collector cut-off current
2N6478
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
V
CE
=100V;I
B
=0
V
EB
=5V; I
C
=0
I
C
=1.0A ; V
CE
=4V
I
C
=2.5A ; V
CE
=4V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=0.5A ; V
CE
=4V
I
C
=1.0A;I
B
=0.1A
I
C
=2.5A;I
B
=0.5A
I
C
=1.0A ; V
CE
=4V
I
C
=2.5A ; V
CE
=4V
V
CE
=130V
V
CE
=120V; T
C
=150
V
CE
=150V
V
CE
=140V; T
C
=150
V
CE
=80V;I
B
=0
CONDITIONS
2N6477 2N6478
SYMBOL
MIN
120
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
140
1.0
2.0
1.8
3.0
2.0
10
2.0
10
V
V
V
V
I
CEX
Collector cut-off current
V
BE
=-1.5V
mA
2.0
mA
2.0
25
5
250
0.2
150
mA
pF
MHz
2
SAVANTIC [ Savantic, Inc. ]
