SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Excellent safe operating area
·High gain at high current
APPLICATIONS
·General-purpose types of switching
and linear-amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6470 2N6471 2N6472
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
)
SYMBOL
PARAMETER
2N6470
V
CBO
Collector-base voltage
2N6471
2N6472
2N6470
V
CEO
Collector-emitter voltage
2N6471
2N6472
V
EBO
I
C
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
50
70
90
40
60
80
5
15
5
125
150
-65~200
V
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.4
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
