SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6470 2N6471 2N6472
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
40
TYP.
MAX
UNIT
2N6470
2N6471
2N6472
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.2A ;IB=0
V
60
80
VCEsat-1
VCEsat-2
VBE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=5A; IB=0.5A
1.3
3.5
3.5
1.0
V
V
IC=15A; IB=3A
IC=15A ; VCE=4V
VCE=1/2Rated VCEO; IB=0
V
ICEO
mA
mA
mA
VCE= Rated VCEO; VBE=-1.5V
TC=150ꢀ
0.2
5.0
ICEX
IEBO
VEB=5V; IC=0
1.0
hFE-1
hFE-2
fT
IC=5A ; VCE=4V
IC=15A ; VCE=4V
IC=0.5A ; VCE=10V
20
5
150
DC current gain
Transition frequency
4
2