SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6465 2N6466
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
100
120
TYP.
MAX
UNIT
2N6465
2N6466
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=50mA ;IB=0
V
VCEsat
Collector-emitter saturation voltage IC=1.5A; IB=0.15A
1.2
1.5
V
V
VBE
Base-emitter on voltage
Collector cut-off current
IC=1.5A ; VCE=4V
VCB=110V; IE=0
VCB=130V; IE=0
VCE= 100V,IB=0
VCE= 120V,IB=0
VEB=5V; IC=0
2N6465
2N6466
2N6465
2N6466
ICBO
10
µA
ICEO
Collector cut-off current
100
µA
µA
IEBO
hFE
fT
Emitter cut-off current
DC current gain
10
IC=1.5A ; VCE=4V
IC=0.5A ; VCE=10V
15
5
150
Transition frequency
MHz
2