SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N6372
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6373
2N6374
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
2N6372
I
CEO
Collector cut-off current
2N6373
2N6374
I
CBO
I
EBO
Collector cut-off current
Emitter cut-off current
2N6372
h
FE
DC current gain
2N6373
2N6374
f
T
Transition frequency
I
C
=2A; I
B
=0.2A
I
C
=6A; I
B
=0.6A
I
C
=2A; I
B
=0.2A
I
C
=6A; I
B
=0.6A
V
CE
=80V; I
B
=0
V
CE
=60V; I
B
=0
V
CE
=40V; I
B
=0
I
C
=0.1A ;I
B
=0
2N6372 2N6373 2N6374
SYMBOL
CONDITIONS
MIN
80
60
40
TYP.
MAX
UNIT
V
0.7
1.2
1.2
2.0
V
V
V
V
0.1
mA
V
CB
=Rated V
CB
; I
E
=0
V
EB
=6V; I
C
=0
I
C
=2A ; V
CE
=2V
I
C
=2.5A ; V
CE
=2V
I
C
=3A ; V
CE
=2V
I
C
=0.5A;V
CE
=10V;f=1MHz
4
20
10
0.1
µA
mA
100
MHz
2