SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdwon voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition freuqency
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=8A ;I
B
=0.8A
I
C
=16A; I
B
=3.2A
I
C
=8A ; V
CE
=4V
V
CE
=80V; I
B
=0
V
CE
=100V; V
BE(off)
=1.5V
T
C
=150
V
EB
=7V; I
C
=0
I
C
=8A ; V
CE
=4V
I
C
=16A ; V
CE
=4V
I
C
=1A ; V
CE
=4V
15
5
0.2
MIN
80
TYP.
2N6359
SYMBOL
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BE
I
CEO
I
CEX
I
EBO
h
FE-1
h
FE-2
f
T
MAX
UNIT
V
1.4
4.0
2.2
2.0
2.0
10.0
5.0
60
V
V
V
mA
mA
mA
MHz
2
SAVANTIC [ Savantic, Inc. ]
