SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N6326
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6327
2N6328
V
CEsat
V
BEsat
V
BE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
2N6326
I
CBO
Collector cut-off current
2N6327
2N6328
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
I
C
=15A; I
B
=1.5A
I
C
=15A; I
B
=1.5A
I
C
=8A ; V
CE
=4V
V
CB
=60V; I
E
=0
T
C
=150
V
CB
=80V; I
E
=0
T
C
=150
V
CB
=100V; I
E
=0
T
C
=150
V
EB
=4V; I
C
=0
I
C
=8A ; V
CE
=4V
I
C
=30A ; V
CE
=4V
I
C
=0.2 A ;I
B
=0
2N6326 2N6327 2N6328
SYMBOL
CONDITIONS
MIN
60
80
100
TYP.
MAX
UNIT
V
1.2
1.5
1.5
1.0
5.0
1.0
5.0
1.0
5.0
1.0
25
6
3
30
V
V
V
mA
mA
I
C
=1A ; V
CE
=10V;f=1.0MHz
MHz
2
SAVANTIC [ Savantic, Inc. ]
