SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N6312
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6313
2N6314
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
2N6312
I
CEO
Collector cut-off current
2N6313
2N6314
2N6312
I
CBO
Collector cut-off current
2N6313
2N6314
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
h
FE-4
C
OB
f
T
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
DC current gain
Output capacitance
Transition frequency
I
C
=-1.5A; I
B
=-0.15A
I
C
=-3A; I
B
=-0.3A
I
C
=-5A; I
B
=-1.25A
I
C
=-1.5A ; V
CE
=-2V
V
CE
=-30V; I
B
=0
V
CE
=-50V; I
B
=0
V
CE
=-70V; I
B
=0
V
CB
=-40V; I
E
=0
V
CB
=-60V; I
E
=0
V
CB
=-80V; I
E
=0
I
C
=-0.1A ;I
B
=0
SYMBOL
2N6312 2N6313 2N6314
CONDITIONS
MIN
-40
-60
-80
TYP.
MAX
UNIT
V
-0.7
-2.0
-4.0
-1.4
V
V
V
V
-1.0
mA
-50
µA
V
CE
=Rated V
CE
; V
BE(off)
=1.5V
T
C
=125
V
EB
=-5V; I
C
=0
I
C
=-0.5A ; V
CE
=-2V
I
C
=-1.5A ; V
CE
=-2V
I
C
=-3A ; V
CE
=-2V
I
C
=-5A ; V
CE
=-4V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-0.5A;V
CE
=-10V;f=1.0MHz
4
40
25
10
4
-0.1
-1.0
-0.5
mA
mA
100
300
pF
MHz
2
SAVANTIC [ Savantic, Inc. ]
